Ahsan Sheikh Aamir (Assistant Professor Department Of Electronics And Communication Engineering National Institute Of Technology Srinagar India)
Ahsan Sheikh Aamir (Assistant Professor Department Of Electronics And Communication Engineering National Institute Of Technology Srinagar India) - Gan Transistor Modeling For Rf And Power Electronics Using The Asm - Hemt Model - Paperback
Ahsan Sheikh Aamir (Assistant Professor Department Of Electronics And Communication Engineering National Institute Of Technology Srinagar India) - Gan Transistor Modeling For Rf And Power Electronics Using The Asm - Hemt Model - Paperback
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Binding: Paperback
Description: Ga N Transistor Modeling for RF and Power Electronics: Using The ASM - Ga N - HEMT Model covers all aspects of characterization and modeling of Ga N transistors for both RF and Power electronics applications. Chapters cover an in - depth analysis of the industry standard compact model ASM - HEMT for Ga N transistors. The book details the core surface - potential calculations and a variety of real device effects including trapping self - heating field plate effects and more to replicate realistic device behavior. The authors also include chapters on step - by - step parameter extraction procedures for the ASM - HEMT model and benchmark test results. Ga N is the fastest emerging technology for RF circuits as well as power electronics. This technology is going to grow at an exponential rate over the next decade. This book is envisioned to serve as an excellent reference for the emerging Ga N technology especially for circuit designers materials science specialists device engineers and academic researchers and students.
Title: Gan Transistor Modeling For Rf And Power Electronics Using The Asm - Hemt Model
Author(s): Ahsan Sheikh Aamir (Assistant Professor Department Of Electronics And Communication Engineering National Institute Of Technology Srinagar India)
Publisher: Elsevier Science Publishing Co Inc
Barcode: 9780323998710
Pages: 260 Pages, 200 Illustrations (150 In Full Color); Illustrations, Unspecified
Publication Date: 5/22/2024
Series: Woodhead Publishing Series in Electronic and Optical Materials
Category: Circuits & Components
Description: Ga N Transistor Modeling for RF and Power Electronics: Using The ASM - Ga N - HEMT Model covers all aspects of characterization and modeling of Ga N transistors for both RF and Power electronics applications. Chapters cover an in - depth analysis of the industry standard compact model ASM - HEMT for Ga N transistors. The book details the core surface - potential calculations and a variety of real device effects including trapping self - heating field plate effects and more to replicate realistic device behavior. The authors also include chapters on step - by - step parameter extraction procedures for the ASM - HEMT model and benchmark test results. Ga N is the fastest emerging technology for RF circuits as well as power electronics. This technology is going to grow at an exponential rate over the next decade. This book is envisioned to serve as an excellent reference for the emerging Ga N technology especially for circuit designers materials science specialists device engineers and academic researchers and students.
Title: Gan Transistor Modeling For Rf And Power Electronics Using The Asm - Hemt Model
Author(s): Ahsan Sheikh Aamir (Assistant Professor Department Of Electronics And Communication Engineering National Institute Of Technology Srinagar India)
Publisher: Elsevier Science Publishing Co Inc
Barcode: 9780323998710
Pages: 260 Pages, 200 Illustrations (150 In Full Color); Illustrations, Unspecified
Publication Date: 5/22/2024
Series: Woodhead Publishing Series in Electronic and Optical Materials
Category: Circuits & Components
